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V1.0

29/10/19

Transistor

NPN, TO-3

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Description:

Complementary silicon power transistors.

The power transistors designed for high power audio, disk head positions and other linear applications.

These devices can also be used in power switching circuits such as relay or solenoid drivers. DC-DC converters or inverters.

Features:

• Pb-free packages

• High safe operating area (100% tested) 150W at 100V

• Completely characterized for linear operation

• High DC current gain and low saturation voltage

• hfe = 15 (Min.) at 8A, 4V

• Vce (sat) = 1.4V (Max.) at Ic = 8A, Ib = 0.8A

• For low distortion complementary designs

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

140

V DC

Collector-Emitter Voltage

Vcex

160

Collector-Base Voltage

Vcbo

Emitter-Base Voltage

Vebo

7

Collector Current

-Continuous

-Peak (Note 2)

Ic

16

30

A DC

Base Current

-Continuous

-Peak (Note 2)

Ib

4

15

Total Device Dissipation at Ta = 25°C Derate above 25°C

Pd

150

0.855

W

W/°C

Operating and Storage Junction Temperature Range

Tj, Tstg

-65 to +200

°C

Maximum Ratings (Note 1)

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are

individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be affected.

1. Indicates JEDEC registered data.

2. Pulse test: pulse width = 5μs, duty cycle ≤10%.