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STM32H533CEU6 Folha de dados(PDF) 165 Page - STMicroelectronics |
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STM32H533CEU6 Folha de dados(HTML) 165 Page - STMicroelectronics |
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165 / 231 page ![]() DS14539 Rev 1 165/231 STM32H533xx Electrical characteristics 200 Figure 35. OCTOSPI hyperbus clock Figure 36. OCTOSPI hyperbus read Figure 37. OCTOSPI hyperbus write MSv47732V3 CLK t(NCLK) tw(NCLKL) tw(NCLKH) tf(NCLK) tr(NCLK) tr(CLK) tw(CLKH) tw(CLKL) t(CLK) tf(CLK) NCLK VOD(CLK) MSv47733V3 NCS tACC= Initial access Latency count Command address 47:40 39:32 31:24 23:16 15:8 7:0 Dn A Dn B Dn+1 A Dn+1 B Host drives DQ[7:0] and the memory drives RWDS. CLK, NCLK RWDS DQ[7:0] Memory drives DQ[7:0] and RWDS. tw(CS) tv(RWDS) tv(CLK) tv(DS) tv(DQ) th(CLK) th(DS) tv(OUT) th(OUT) th(DQ) ts(DQ) MSv47734V3 NCS Access latency Latency count Command address 47:40 39:32 31:24 23:16 15:8 7:0 Dn A Dn B Dn+1 A Dn+1 B Host drives DQ[7:0] and the memory drives RWDS. Host drives DQ[7:0] and RWDS. CLK, NCLK RWDS DQ[7:0] tw(CS) tv(RWDS) tv(CLK) th(CLK) High = 2x latency count Low = 1x latency count Read write recovery th(OUT) tv(OUT) th(OUT) tv(OUT) th(OUT) tv(OUT) |
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