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STM32H533CEU6 Folha de dados(PDF) 109 Page - STMicroelectronics |
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STM32H533CEU6 Folha de dados(HTML) 109 Page - STMicroelectronics |
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109 / 231 page ![]() DS14539 Rev 1 109/231 STM32H533xx Electrical characteristics 200 Table 30. Typical and maximum current consumption in Run mode, code with data processing running from SRAM with cache 2-way Symbol Parameter Conditions fHCLK (MHz) Typ LDO Max(1) Unit TJ = 25°C TJ = 85°C TJ = 105°C TJ = 130°C IDD(Run) Supply current in Run mode All peripherals disabled VOS0 250 30.1 32 55 69 - mA 200 26.1 28 49 62 - 168 24.1 26 46 59 - VOS1 150 20.8 22 39 48 64 100 19.1 21 36 46 62 250 17.6 19 34 43 59 200 15.8 17 31 40 56 VOS2 150 14.5 16 28 35 49 100 10.1 11 21 28 41 VOS3 250 9.2 10 19 25 36 200 6.0 7 14 19 30 168 3.0 4 9 14 25 1. Evaluated by characterization - Not tested in production. |
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