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ADRF5448BCZ Folha de dados(PDF) 4 Page - Analog Devices

Nome de Peças ADRF5448BCZ
Descrição Electrónicos  Die on Carrier, Silicon SP4T Switch, Nonreflective, 100 MHz to 45 GHz
PDF  14 Pages
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

ADRF5448BCZ Folha de dados(HTML) 4 Page - Analog Devices

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Data Sheet
ADRF5448
SPECIFICATIONS
analog.com
Rev. 0 | 4 of 14
Table 1. Specifications (Continued)
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
DIGITAL CONTROL INPUTS
Voltage
Low
VINL
0
0.8
V
High
VINH
1.2
3.45
V
Current
Low
IINL
<1
μA
High
IINH
V1 and V2
<1
μA
EN and LS
33
μA
RECOMMENDED OPERATING CONDITIONS
Supply Voltage
Positive
VDD
3.15
3.45
V
Negative
VSS
−3.45
−3.15
V
Digital Control Inputs Voltages
EN and LS
0
VDD
V
RF Input Power2, 3
f = 0.3 GHz to 40 GHz, TCASE = 85°C, life time
Through Path
RF signal is applied to RFC or through the connected RF
throw port (selected RFx)
29
dBm
Terminated Path
RF signal is applied to the unselected RFx
17.5
dBm
Hot Switching
RF signal is applied to RFC while switching between the
RFx ports
29
dBm
Case Temperature
TCASE
–40
+105
°C
1 For input linearity performance over frequency, see Figure 20 to Figure 23.
2 For power derating over frequency, see Figure 2 and Figure 3.
3 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.



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