BAT41 datasheet(3/11 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.24

P(W)

IF(AV)(A)

= 0.05

= 0.2

= 0.1

= 0.

=tp/T

Figure 2. Average forward current versus ambient

temperature (δ = 1)

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

100

125

150

IF(AV)(A)

Tamb (°C)

=tp/T

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

100

Tj=125 °C

Tj=75 °C

Tj=25 °C

Tj=100 °C

Tj=50 °C

Tj=150 °C

VR(V)

Figure 4. Reverse leakage current versus junction

temperature (typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

100

125

150

VR=50 V

IR(µA)

Tj(°C)

Figure 5. Junction capacitance versus reverse voltage

applied (typical values)

0.1

1.0

10.0

1.0

10.0

100.0

C(pF)

F = 1 MHz

osc= 30 mVRMS

j = 25 °C

VR(V)

Figure 6. Forward voltage drop versus forward current

(typical values)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

T j = -40 °C

F(A)

F(V)

Tj = 75 °C

BAT41

Characteristics (curves)

DS4884 - Rev 3

page 3/11

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