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STPST2H100 Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STPST2H100
Descrição Electrónicos  100 V - 2 A power Schottky trench rectifier
PDF  14 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPST2H100 Folha de dados(HTML) 4 Page - STMicroelectronics

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1.1
Characteristics (curves)
Figure 3. Average forward current versus lead
temperature (δ = 0.5)
IF(AV)(A)
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
175
Tl(°C)
SOD128-Flat
SOD123-Flat
SMB Flat
Figure 4. Relative variation of thermal impedance junction
to lead versus pulse duration (SOD123Flat)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Zth(j-l)/Rth(j-l)
tP(s)
Single pulse
Figure 5. Relative variation of thermal impedance junction
to lead versus pulse duration (SOD128Flat)
Zth(j-l)/Rth(j-l)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
tP(s)
Figure 6. Relative variation of thermal impedance junction
to lead versus pulse duration (SMB Flat)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Zth(j-l)/Rth(j-l)
Single pulse
tP(s)
Figure 7. Reverse leakage current versus reverse voltage
applied (typical values)
IR(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0
10
20
30
40
50
60
70
80
90
100
VR(V)
Tj = 25 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
Tj = 125 °C
Tj = 150 °C
Figure 8. Junction capacitance versus reverse voltage
applied (typical values)
10
100
1000
0.1
1.0
10.0
100.0
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
VR(V)
C(pF)
STPST2H100
Characteristics (curves)
DS14190 - Rev 3
page 4/14



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