TLV716, TLV716P

SBVS217B – JUNE 2013 – REVISED NOVEMBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

at TJ = –40°C to 125°C, unless otherwise noted.

(1)

MIN

MAX

UNIT

IN

–0.3

6

V

Voltage (2)

EN1, EN2

–0.3

VIN + 0.3

V

OUT1, OUT2

–0.3

3.6 or VIN + 0.3

V

Current, OUT1, OUT2

–30

Internally limited

mA

Output short circuit duration

Indefinite

s

TJ

Operating junction temperature

–55

150

°C

Tstg

Storage temperature

–55

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to ground.

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)

±2000

V(ESD)

Electrostatic discharge

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all

±500

pins (2)

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted).

MIN

NOM

MAX

UNIT

VIN

Input voltage

1.4

5.5

V

VEN

Enable range: VEN1, VEN2

0

VIN

V

IOUT

Output current: IOUT1, IOUT2

0

150

mA

CIN

Input capacitor

0

1

µF

COUT

Output capacitor: COUT1, COUT2

0

0.1

100

µF

TJ

Operating junction temperature range

–40

125

°C

6.4 Thermal Information

TLV716, TLV716P

THERMAL METRIC (1)

DPQ (X2SON)

UNIT

6 PINS

RθJA

Junction-to-ambient thermal resistance

149.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

93

°C/W

RθJB

Junction-to-board thermal resistance

110.1

°C/W

ψJT

Junction-to-top characterization parameter

3.4

°C/W

ψJB

Junction-to-board characterization parameter

114.9

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

91

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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