STPS160AFN datasheet(3/13 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

(W)

F(AV)

δ =tp/T

δ= 1

δ= 0.5

δ= 0.2

δ= 0.1

δ= 0.05

(A)

F(AV)

Figure 2. Average forward current versus ambient

temperature (δ = 0.5)

5 0

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(A)

F(AV)

δ=tp/T

SM B

= 80 °C/ W

=1.5cm

th(j-a)

(CU)

(°C)

amb

SMB R

th(j-a)

t h(j-I)

SM A

=100°C/W

=1.5cm

th(j-a)

(CU)

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 4. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMB)

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

th(j-a)

t (s)

Single pulse

Figure 5. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMA)

1E-2

1E-1

1E+0

1E+1

1E+2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

th(j-a)

t (s)

Single pulse

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values)

1E-1

1E+0

1E+1

1E+2

1E+3

I (µA)

V (V)

T =100°C

T =75°C

T =25°C

STPS160

Characteristics (curves)

DS0962 - Rev 10

page 3/13

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