ESM1600 datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

ELECTRICAL CHARACTERISTICS

VCC = +35V, -25

oC ≤ Tamb ≤ +85oC (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Typ.

Fig.

–

Input Voltage Range - Note 1

Non-inverting Input

Inverting Input

Input Control Voltage (2V < VCM < 33V) - Note 2

150

500

IIB

Input Bias Current - Note 3

µA

ISC

Short-circuit Output Current

VCC = +10 to +35 V

VCC–VO

Output Saturation Voltage (high level) - (IO = –10mA)

1.5

IOL

IOH

Output Off-state Current

(VI

+ = 2V, VI – = 33V)

µA

ICC

Supply Current

RL =

∞ for the 4 Comparators

RL Common for the 4 Comparators

SVO

Output Slew-rate (RL =3k

Ω,Tamb = +25oC)

µs

Input Protective Diode Forward Voltage

(I = 20mA, Tamb = +25

oC)

1.5

–

Energy of Pulses against which Circuit Output is Protected

(Tamb = +25

oC) - Note 4

–

Pulsed Current Applied to Protective Output Diodes

(Tamb = +25

oC) - Note 5

0.4

No tes : 1. When negative input is biased between 0 and 2 volts output is always low.

2. Comparator hysteresis voltage on positive input on the one hand and negative input on the other hand equals sum of input control

voltages VC1 +VC2 or VC3 +VC4.

3. Input current flows out of the circuit owing to PNP input stage. This current is constant and independent of output level. So no load

change is transmitted to inputs.

4. By definition, a circuit is immunized against powerful signals when no durable character istic change occurs after the application of

these signals and when the circuit has not been destroyed.

In industrial surroundings, parasitic signals contain usually high voltage (over 200 V) AC harmonics having variable impedance of

500

Ω to 10kΩ.

The power dissipation of thesesignals is divided between clamping diodes and the VCC. Simulationis used to determine the maximum

energy level. The injected current value cannot in any case exceed 3A.

5. Output protective diodes are tested individually by means of positive and negative dischar ge voltages of a capacitor. The negative

discharge control occurs through a single diode. During positive discharge, due to the properties of integration, a grounded collector

PNP transistor appears in parallel with the clamping diode connected to VCC. A part of the current flows through this transistor, VCE

being greater than VCC. If T is the total discharge duration, energy dissipated in the circuit is :

For a certain injected current, the lower the current I2, that is to say the lower the PNP current gain the smaller the energy is dissipated in the cir-

cuit. Topology and technological processes have been chosen to shorten this current gain.

W= ⌠⌡

[i1 ⋅ vd + i2 (VCC + vd) ] dt

ESM1600B

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