STPS3L25S datasheet(3/5 Pages) STMICROELECTRONICS

Nome de Peças	STPS3L25S

Descrição Electrónicos	LOW DROP POWER SCHOTTKY RECTIFIER

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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STPS3L25S

3/5

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating ver-

sus pulse duration.

1E-3

1E-2

1E-1

1E+0

IM(A)

Ta=25°C

Ta=100°C

Ta=50°C

t(s)

δ=0.5

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-a)/Rth(j-a)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 6: Relative variation of thermal impedance

junction to ambient versus pulse duration.

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

IR(mA)

Tj=125°C

Tj=25°C

Tj=100°C

Tj=150°C

VR(V)

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

100

500

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

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