STPS15H100CB datasheet(3/8 Pages) STMICROELECTRONICS

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STPS15H100C

Characteristics

Figure 1. Conduction losses versus average

current (per diode)

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5, per diode)

0123456789

IF(av)(A)

PF(av)(W)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

= tp/T

100

125

150

175

Tamb(°C)

Rth

a)=

= 70 °C/W

IF(av)(A)

= tp/T

Rth (j - a)

Figure 3. Normalized avalanche power derating

versus pulse duration at Tj = 125 °C

Figure 4. Relative variation of thermal

impedance junction to case versus pulse

duration

P(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 5. Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 6. Junction capacitance versus reverse

voltage applied

(typical values, per diode)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

2030

405060

7080

100

V (V)

Tj = 150 °C

I (mA)

Tj = 125 °C

= 100 °C

= 50 °C

= 75 °C

= 25 °C

0.0

0.1

1.0

100

VR(V)

F = 1 MHz

Vosc = 30 mV

Tj = 25 °C

C(nF)

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