DALC112S1 datasheet(1/3 Pages) STMICROELECTRONICS

Nome de Peças	DALC112S1

Descrição Electrónicos	LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION

PDF	3 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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DALC112S1

®

January 1998 - Ed: 4

IEC 1000-4-2level 3

8 kV (air discharge)

6 kV (contactdischarge)

COMPLIESWITH THE FOLLOWINGSTANDARDS :

ARRAYOF 12 DIODESFOR ESD PROTECTION.

PEAK REVERSE VOLTAGE VRRM= 18V PER

DIODE.

VERYLOWCAPACITANCE PER DIODE: C < 5pF.

VERY LOW LEAKAGE CURRENT : IR <2

µA.

FEATURES

SO8

FUNCTIONAL DIAGRAM

I/O 5

I/O 6

I/O 1

I/O 2

I/O 3

I/O 4

REF 1

REF 2

LOW CAPACITANCE DIODE

ARRAY FOR ESD PROTECTION

Application Specific Discretes

A.S.D.

TM

Where ESD protection for high speed datalines is

required :

LAN / WAN equipment

Computer I/O

Graphic video port

Set top box I/O

MAIN APPLICATIONS

ARRAY of 12 diodes configured by cells of 2

diodes, each cell being used to protect signal line

from transient overvoltages by clamping action.

Its very low capacitance allows to protect fast

signals with no distortion. It is particularly suited for

the protection of graphic video ports.

DESCRIPTION

1/3

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