BYV1040 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

IR *

Tj = 25

°C

VR = VRRM

0.5

Tj = 100

°C

VF *IF = 1A

Tj = 25

°C

0.55

IF = 3A

0.85

STATIC CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Tj = 25

°C

VR = 0

220

DYNAMIC CHARACTERISTICS

* Pulse test: tp

≤ 300µs δ < 2%.

Forward current flow in a Schottky rectifier is due to

majority carrier conduction. So reverse recovery is

not affected by stored charge as in conventional PN

junction diodes.

Nevertheless, when the device switches from for-

ward biased condition to reverse blocking state,

current is required to charge the depletion capaci-

tance of the diode.

This current depends only of diode capacitance and

external circuit impedance. Satisfactory circuit be-

haviour analysis may be performed assuming that

Schottky rectifier consists of an ideal diode in pa-

rallel with a variable capacitance equal to the junc-

tion capacitance (see fig. 5 page 4/4).

2/4

Fig.1 : Forward current versus forward

voltage at low level (typical values).

Fig.2 : Forward current versus forward

voltage at high level (typical values).

BYV 10-40

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