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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IXFN60N80P Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN60N80P Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1350 eq IXFN60N80P N-Channel MOSFET www.iscsemi.com 1 DESCRIPTION · Drain Current -ID= 53A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 140mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High Speed Power Switching Applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 53 A IDM Pulse Drain Current 150 A PD Total Dissipation@TC=25℃ 1040 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ Viso Isolation Voltage 2500 V THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.12 ℃ /W D G S S SOT-227 package |
Nº de peça semelhante - IXFN60N80P |
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Descrição semelhante - IXFN60N80P |
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