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STPSC1206D Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças STPSC1206D
Descrição Electrónicos  Silicon Carbide Schottky Diode
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STPSC1206D Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  STPSC1206D Datasheet HTML 1Page - Inchange Semiconductor Company Limited STPSC1206D Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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Silicon Carbide Schottky Diode
STPSC1206D
www.iscsemi.com
1
FEATURES
· High Surge Current Capability
· Dedicated to PFC Boost Diode
· Positive Temperature Coefficient
APPLICATIONS
· Solar Inverters
· Power Factor Correction
· Switch Mode Power Supplies
· Data Center
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
12
A
IFSM
Non Repetitive Peak Surge
Current
TC=25℃,
tp=10ms
50
A
TC=125℃,
tp=10ms
40
A
TJ
Junction Temperature
-40~175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.75
℃
/W


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