NTE225 datasheet(1/2 Pages) NTE

Nome de Peças	NTE225

Descrição Electrónicos	Silicon NPN Transistor Linear Amplifier and High Speed Switch

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Fabricante Electrônico	NTE [NTE Electronics]

Página de início	http://www.nteinc.com

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NTE225

Silicon NPN Transistor

Linear Amplifier and High Speed Switch

Description:

The NTE225 is a silicon NPN transistor in a TO39 type package (with flange) designed for industrial

and commercial equipment. Typical applications include high voltage differential and operational am-

plifiers, high voltage inverters, and high voltage, low current switching and series regulators.

Features:

D High Voltage Rating: VCEO(sus) = 350V Max.

D Low Saturation Voltage

Absolute Maximum Ratings:

Collector−Base Voltage, VCBO

450V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector−Emitter Sustaining Voltage, VCEO(sus)

350V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter−Base Voltage, VEBO

7V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Current, IC

1A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, IB

500mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TC = +25°C), PD

10W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, TJ

−65° to +200°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg

−65° to +200°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction−to−Case, RthJC

17.5°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (During Soldering, 1/32” from seating plane for 10sec Max, TL

+255°C

. . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector−Emitter Sustaining Voltage

VCEO(sus) IC = 50mA, IB = 0, Base Open, Note 1

350

−

V

Collector Cutoff Current

ICEO

VCE = 300V, IB = 0

−

20

µA

ICEV

VCE = 450V, VBE = −1.5V

−

500

µA

Emitter Cutoff Current

IEBO

VBE = 6V, IC = 0

−

20

µA

DC Current Gain

hFE

VCE = 10V, IC = 20mA

40

−

160

VCE = 10V, IC = 2mA

30

−

Collector−Emitter Saturation Voltage

VCE(sat) IC = 50mA, IB = 4mA

−

0.5

V

Base−Emitter Saturation Voltage

VBE(sat) IC = 50mA, IB = 4mA

−

1.3

V

Small−Signal Current Gain

hfe

VCE = 10V, IC = 10mA, f = 5MHz

3

−

Output Capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

−

10

pF

Second Breakdown Collector Current

IS/b

VCE = 200V, with Base Forward Biased

50

−

mA

Note 1. The sustaining voltage (VCEO(sus)) MUST NOT be measured on a curve tracer.

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