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STM32F429NET7 Folha de dados(PDF) 104 Page - STMicroelectronics

Nome de Peças STM32F429NET7
Descrição Electrónicos  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT
PDF  231 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F429NET7 Folha de dados(HTML) 104 Page - STMicroelectronics

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Electrical characteristics
STM32F427xx STM32F429xx
104/231
DocID024030 Rev 6
Figure 25. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF)
1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset
OFF), the typical current consumption is reduced by additional 1.2 µA.
2. Based on characterization, not tested in production unless otherwise specified.
3. Based on characterization, tested in production.
Table 29. Typical and maximum current consumptions in VBAT mode
Symbol
Parameter
Conditions(1)
Typ
Max(2)
Unit
TA = 25 °C
TA = 85 °C
TA =
105 °C
VBAT =
1.7 V
VBAT=
2.4 V
VBAT =
3.3 V
VBAT = 3.6 V
IDD_VBAT
Backup
domain supply
current
Backup SRAM ON, low-speed
oscillator (LSE) and RTC ON
1.28
1.40
1.62
6
11
µA
Backup SRAM OFF, low-speed
oscillator (LSE) and RTC ON
0.66
0.76
0.97
3
5
Backup SRAM ON, RTC and
LSE OFF
0.70
0.72
0.74
5
10
Backup SRAM OFF, RTC and
LSE OFF
0.10
0.10
0.10
2
4
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization results.



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