5.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

TA

Operating free-air temperature

-55

150

°C

5.5 Thermal Information

THERMAL METRIC (1)

MMBZ30VCL

UNIT

DBZ (SOT-23)

3 PINS

RθJA

Junction-to-ambient thermal resistance

262.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

147.0

°C/W

RθJB

Junction-to-board thermal resistance

96.1

°C/W

ΨJT

Junction-to-top characterization parameter

33.5

°C/W

ΨJB

Junction-to-board characterization parameter

95.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

5.6 Electrical Characteristics

over TA = 25°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VF

Forward Voltage

IF = 10mA, TA = 25°C

1.1

V

VRWM

Reverse stand-off voltage

TA = 25°C

24

V

VBR

Breakdown voltage (1)

IT = 10mA, TA = 25°C

24.8

34.8

V

VCLAMP

Clamping voltage (2)

IPPM = 0.5A, tp = 10/1000µs

31

40

V

ILEAK

Leakage current

VIO = ±24V

1

25

nA

SZ

Temperature Coefficient

IZ = 10mA

13

mV/C

CL

Line capacitance

VIO = 0V, f = 1MHz, Vpp = 30mV

4.5

pF

(1)

VBR is defined as the voltage when 10mA is applied and before the device enters into the shallow snapback state

(2)

Device stressed with 10/1000 µs exponential decay waveform according to IEC 61643-321

MMBZ30VCL

SLVSIA0 – NOVEMBER 2024

www.ti.com

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