ISB3084 datasheet(1/2 Pages) ISC

Nome de Peças	ISB3084

Descrição Electrónicos	Silicon NPN Power Transistor

PDF	2 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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Silicon NPN Power Transistor

ISB3084

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 550V(Min)

·

Low Saturation Voltage-

: VCE(sat)= 1.2V(Max)@ (IC= 5A)

APPLICATIONS

· Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

550

V

VCEO

Collector-Emitter Voltage

550

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

15

A

IB

Base Current

4

A

PC

Collector Power Dissipation

@ TC=25℃

125

W

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃

/W

Nº de peça semelhante - ISB3084

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ISB3084 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

ISB3084 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

Nº de peça semelhante - ISB3084

Descrição semelhante - ISB3084

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