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ISL73847SEHDEMO2Z Folha de dados(PDF) 34 Page - Renesas Technology Corp |
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ISL73847SEHDEMO2Z Folha de dados(HTML) 34 Page - Renesas Technology Corp |
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34 / 40 page ![]() R34DS0017EU0104 Rev.1.04 Page 34 Jan 31, 2025 ISL73041SEH Datasheet 8. Die and Assembly Characteristics Table 2. Die and Assembly Related Information Die Information Dimensions 2794µm x 2794µm (110 mils x 110 mils) Thickness: 305µm ±25µm (12 mils ±1 mil) Interface Materials Glassivation Type: Silicon dioxide and silicon nitride Thickness: 18.5kA ±10% dioxide; 6kA ±10% nitride Top Metalization Type: Al 99.5%, Cu 0.5% Thickness: 2.85µm ±0.15µm Backside Finish Silicon Process 0.25µm BiCMOS Assembly Information Substrate and Package Lid Potential Internal connection to the four EPAD (SGND) Additional Information Transistor Count 5737 Weight of Packaged Device 0.36g Lid Characteristics Finish: Gold Lid Potential: Connected to SGND pin |
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