Data Sheet

ADRF5030

SPECIFICATIONS

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Rev. 0 | 4 of 13

Table 1. Electrical Characteristics (Continued)

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

Hot Switching

RF signal is applied to RFC or RFx while switching in

between RF1/RF2.

Average

33

dBm

Peak, Pulse

36

dBm

Case Temperature

TCASE

−40

+105

°C

1 For input linearity performance over frequency, see Figure 12 to Figure 15.

2 For power derating over frequency, see the Power Derating Curves section.

3 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.

4 Peak: ( ≤100 ns pulse duration, 5% duty cycle).

5 Pulse: (>100 ns pulse duration, 15% duty cycle).

SINGLE-SUPPLY OPERATION

VDD = 3.3 V, VSS = 0, VCTRL = 0 V or VDD, TCASE = 25°C for 50 Ω system, unless otherwise noted.

Table 2. Single-Supply Operational Specifications

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

FREQUENCY RANGE

f

0.1

20

GHz

SWITCHING CHARACTERISTICS

Rise and Fall Time

tRISE, tFALL

10% to 90% of RF output

110

ns

On and Off Time

tON, tOFF

50% VCTRL to 90% of RF output

230

ns

Settling Time (0.1 dB)

50% VCTRL to 0.1 dB of final RF output

250

ns

INPUT LINEARITY

f = 0.1 GHz to 20 GHz

Input Compression

P0.1dB

22

dBm

Third-Order Intercept

IP3

Two-tone input power = 6 dBm each tone, f = 0.1

GHz to 20 GHz, Δf = 1 MHz

52

dBm

RECOMMENDED OPERATING CONDITONS

RF Input Power

PIN

f = 0.1 GHz to 20 GHz, TCASE = 85°C

Through Path

RF signal is applied to RFC or through connected

to RFx.

22

dBm

Terminated Path

RF signal is applied to unselected RFx (terminated

within internal resistor).

22

dBm

Hot Switching

RF signal is applied to RFC or RFx while switching

in between RF1/RF2.

22

dBm