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APT26M100JCU2 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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APT26M100JCU2 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISCFM8089 eq APT26M100JCU2 Boost Chopper MOSFET Power Module www.iscsemi.com 1 DESCRIPTION · Drain Current -ID= 26A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 396mΩ(Max)@VGS= 10V APPLICATIONS · AC and DC Motor Control · Switched Mode Power Supplies · Power Factor Correction ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 1000 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 26 A IDM Pulse Drain Current 140 A PD Total Dissipation@TC=25℃ 543 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case MOSFET 0.23 ℃ /W Sic Diode 1.65 ℃ /W K D S G |
Nº de peça semelhante - APT26M100JCU2 |
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Descrição semelhante - APT26M100JCU2 |
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