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IPZA65R018CM8 Folha de dados(PDF) 9 Page - Infineon Technologies AG |
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IPZA65R018CM8 Folha de dados(HTML) 9 Page - Infineon Technologies AG |
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9 / 15 page ![]() 650V CoolMOS™ CM8 Power Transistor IPZA65R018CM8 Public Datasheet 9 Revision 2.1 https://www.infineon.com 2025‑03‑07 Diagram 9: Typ. transfer characteristics Diagram 10: Typ. gate charge I =f( ); =20V; parameter: V V T V =f( ); =29.7 A pulsed; parameter: Q I V Diagram 11: Forward characteristics of reverse diode Diagram 12: Avalanche energy I =f( ); parameter: V T E =f( ); =6.7 A; =50 V T I V D GS DS j GS gate D DD F SD j AS j D DD 0 2 4 6 8 10 12 VGS [V] 0 150 300 450 600 750 900 25 °C 150 °C 0 40 80 120 160 200 Qgate [nC] 0 2 4 6 8 10 12 400 V 120 V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD [V] 10 1 100 101 102 103 25 °C 125 °C 25 50 75 100 125 150 Tj [°C] 0 50 100 150 200 250 300 |
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