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ISCF8088 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCF8088
Descrição Electrónicos  SiC N-Channel MOSFET
PDF  3 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8088 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCF8088 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8088 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8088 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCF8088
eq G2R120MT33J
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
Optimized Package with Separate Driver Source Pin
·
Low Device Capacitances
·
Robust Body Diode with Low VF
APPLICATIONS
·
Solar String Inverters
·
EV-Fast Chargers
·
Switched Mode Power Supply
·
Energy Storage
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
3300
V
VGSS
Gate-Source Opetation Voltage
-10/+25
V
ID
Drain Current-Continuous@Tc=25℃
33
A
ID
Drain Current-Continuous@Tc=135℃
17
A
IDM
Drain Current-Single Pluse
100
A
PD
Total Dissipation @TC=25℃
366
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.41
℃
/W


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