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BUZ905DP Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUZ905DP Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc P-Channel MOSFET Transistor BUZ905DP www.iscsemi.com 1 FEATURES · Drain Current -ID= -16A@ TC=25℃ · Drain Source Voltage -VDSS= -160V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -160 V VGS Gate-Source Voltage-Continuous ± 14 V ID Drain Current-Continuous -16 A IDM Drain Current-Single Pulse -64 A PD Total Dissipation @TC=25℃ 250 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 ℃ /W |
Nº de peça semelhante - BUZ905DP |
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Descrição semelhante - BUZ905DP |
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