STGWA30M65DF2 datasheet(1/2 Pages) ISC

Nome de Peças	STGWA30M65DF2

Descrição Electrónicos	Trench Field-Stop Technology IGBT

PDF	2 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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ISG2180

eq STGWA30M65DF2

Trench Field-Stop Technology IGBT

www.iscsemi.com

1

DESCRIPTION

· Optimized for Low Conduction Losses

· Tight parameters distribution

· Safer Paralleling

· Low thermal resistance

· Soft and very fast recovery anti parallel diode

APPLICATIONS

· PFC Circuits

· Motor Drives

· Uninterruptible power supplies (UPS)

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

650

V

VGES

Gate-Emitter Voltage

±

20

V

IC

Collector Current-Continuous

@ TC=25℃

60

A

IC

Collector Current-Continuous

@ TC=100℃

30

A

ICM

Pulsed Collector Current@ TC=25℃

120

A

PD

Power Dissipation @TC=25℃

258

W

Tj

Operating Junction Temperature

-55~175

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.58

℃

/W

Nº de peça semelhante - STGWA30M65DF2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STGWA30M65DF2	726Kb / 19P	Trench gate field-stop IGBT, M series 650 V, 30 A low loss 18-Dec-2015

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Descrição semelhante - STGWA30M65DF2

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Fairchild Semiconductor	FGH30N120FTDTU	588Kb / 9P	Field stop trench technology
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STGWA30M65DF2 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

STGWA30M65DF2 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

Nº de peça semelhante - STGWA30M65DF2

Descrição semelhante - STGWA30M65DF2

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