2SA965_07 datasheet(2/4 Pages) TOSHIBA

Nome de Peças	2SA965

Descrição Electrónicos	Power Amplifier ApplicationsDriver-Stage Amplifier Applications

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

Logo

2 / 4 page

2SA965

2006-11-09

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −120 V, IE = 0

―

−100

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

―

−100

Collector-emitter breakdown voltage

V (BR) CEO

IC = −10 mA, IB = 0

−120

―

Emitter-base breakdown voltage

V (BR) EBO

IE = −1 mA, IC = 0

−5

―

DC current gain

hFE

(Note)

VCE = −5 V, IC = −100 mA

―

240

Collector-emitter saturation voltage

VCE (sat)

IC = −500 mA, IB = −50 mA

―

−1.0

Base-emitter voltage

VBE

VCE = −5 V, IC = −500 mA

―

−1.0

Transition frequency

VCE = −5 V, IC = −100 mA

―

120

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

―

Note: hFE classification O: 80 to 160, Y: 120 to 240

Marking

A965

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Characteristics

indicator

Part No. (or abbreviation code)

2SA965 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

2SA965 Folha de dados(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4

Folha de dados Download

Ligação URL