2N6576 datasheet(1/2 Pages) ISC

Nome de Peças	2N6576

Descrição Electrónicos	Silicon NPN Power Transistor

PDF	2 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2N6576

www.iscsemi.com

1

DESCRIPTION

Collector-Emitter Breakdown Voltage

-V(BR)CEO= 800V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):5V(Max) @IC= 20A

APPLICATIONS

·

Power switching

·

Hammer drivers

·

Series and shunt regulator

·

Audio amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.46

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7.0

V

IC

Collector Current -Continuous

15

A

ICP

Collector Current-Peak

30

A

IB

Base Current

0.25

A

PC

Collector Power Dissipation@TC=25℃

120

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

Nº de peça semelhante - 2N6576

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
General Semiconductor	2N6576	209Kb / 5P	15 AMPERE NPN DARLINGTON POWER TRAN
Central Semiconductor C...	2N6576	92Kb / 2P	NPN SILICON POWER DARLINGTON TRANSISTOR
Central Semiconductor C...	2N6576	51Kb / 1P	POWER TRANSISTORS TO-3 CASE
List of Unclassifed Man...	2N6576	347Kb / 8P	Power Transistors
Savantic, Inc.	2N6576	112Kb / 3P	Silicon NPN Power Transistors

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Descrição semelhante - 2N6576

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Advanced Semiconductor	MRF342	145Kb / 1P	SILICON POWER NPN TRANSISTOR
NEC	2SC2333	167Kb / 3P	NPN Silicon Power Transistor
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Bourns Electronic Solut...	BUT11	128Kb / 5P	NPN SILICON POWER TRANSISTOR
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Microsemi Corporation	2N2880	45Kb / 2P	NPN POWER SILICON TRANSISTOR
Microsemi Corporation	2N5002	58Kb / 2P	NPN POWER SILICON TRANSISTOR
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Nº de peça semelhante - 2N6576

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