1SS397

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Diode

1SS397

High Voltage, High Speed Switching Applications

Low forward voltage

High voltage

Small total capacitance

Small package

: SC-70

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

420

V

Reverse voltage

400

V

Maximum (peak) forward current

300

mA

Average forward current

100

mA

Surge current (10ms)

2

A

Power dissipation

P

100

mW

Junction temperature

125

°C

Storage temperature range

−55

∼125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.8

―

Forward voltage

―

―

1.0

1.3

V

―

―

―

0.1

Reverse current

―

―

―

1.0

Total capacitance

―

―

2.5

5.0

pF

Reverse recovery time

―

(Fig.1)

―

0.5

―

JEDEC

―

EIAJ

SC-70

TOSHIBA

1-2P1D

Weight: 0.006g

Unit: mm