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2SC5352 Folha de dados(PDF) 3 Page - Toshiba Semiconductor

Nome de Peças 2SC5352
Descrição Electrónicos  Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications
PDF  4 Pages
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5352 Folha de dados(HTML) 3 Page - Toshiba Semiconductor

  2SC5352 Datasheet HTML 1Page - Toshiba Semiconductor 2SC5352 Datasheet HTML 2Page - Toshiba Semiconductor 2SC5352 Datasheet HTML 3Page - Toshiba Semiconductor 2SC5352 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC5352
2006-11-10
3
Collector-emitter voltage VCE (V)
IC – VCE
hFE – IC
Collector current IC (A)
Collector current IC (A)
VBE (sat) – IC
VCE (sat) – IC
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector-emitter voltage VCE (V)
Safe Operating Area
10
6
4
2
0
8
4
6
8
2
0
10
IB = 0.05 A
Common emitter
Tc = 25°C
0.4
1.2
0.6
0.8
0.2
0.1
1.0
Common emitter
VCE = 5 V
Tc = 100°C
25
20
16
8
4
0
0.5
1
0
1.5
−55
12
30
3
1
10
0.1
100
30
Tc = 100°C
−55
25
Common emitter
VCE = 5 V
1
5
10
50
3
5
0.3 0.5
5
0.1
1
0.3
Common emitter
IC/IB = 8
0.1
10
3
Tc = 100°C
−55
25
5
1
0.3
3
0.5
0.5
10
5
0.1
1
0.3
Common emitter
IC/IB = 8
0.1
10
3
Tc = 100°C
−55
25
5
1
0.3
3
0.5
0.5
10
0.01
1
3
1000
3
30
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
1
0.3
0.1
0.03
10
30
100
300
100 μs*
10 μs*
10



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