GD950HTX75P6HB datasheet(4/11 Pages) STARPOWER

4 / 11 page

GD950HTX75P6HB

IGBT Module

9/30/2021

4/11

B05

Tj=25

oC,VCC=400V,

VCEM≤750V

tP≤3μs,VGE=15V,

Tj=175

oC,VCC=400V,

VCEM≤750V

3800

Diode Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=450A,VGE=0V,Tj=25

1.35

1.60

IF=450A,VGE=0V,Tj=150

1.30

IF=450A,VGE=0V,Tj=175

1.25

IF=950A,VGE=0V,Tj=25

1.65

IF=950A,VGE=0V,Tj=175

1.65

Recovered Charge

VR=400V,IF=450A,

-di/dt=5540A/μs,VGE=-8V

LS=24nH,Tj=25

17.6

μC

IRM

Peak Reverse

Recovery Current

198

Erec

Reverse Recovery

Energy

3.68

Recovered Charge

VR=400V,IF=450A,

-di/dt=5010A/μs,VGE=-8V

LS=24nH,Tj=150

34.3

μC

IRM

Peak Reverse

Recovery Current

258

Erec

Reverse Recovery

Energy

7.35

Recovered Charge

VR=400V,IF=450A,

-di/dt=4920A/μs,VGE=-8V

LS=24nH,Tj=175

39.9

μC

IRM

Peak Reverse

Recovery Current

276

Erec

Reverse Recovery

Energy

8.56

NTC Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100

oC,R100=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

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