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GD660HTX75P7HB Folha de dados(PDF) 1 Page - StarPower Europe AG |
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GD660HTX75P7HB Folha de dados(HTML) 1 Page - StarPower Europe AG |
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1 / 11 page  GD660HTX75P7HB IGBT Module ©2023 STARPOWER Semiconductor Ltd. 2/28/2022 1/11 B04 STARPOWER SEMICONDUCTOR IGBT GD660HTX75P7HB 750V/660A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features Low VCE(sat) Trench IGBT technology Low switching losses 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper pinfin baseplate using Si3N4 AMB technology Typical Applications Automotive application Hybrid and electric vehicle Inverter for motor drive Equivalent Circuit Schematic |
Nº de peça semelhante - GD660HTX75P7HB |
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Descrição semelhante - GD660HTX75P7HB |
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