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GD660HTX75P6SB Folha de dados(PDF) 1 Page - StarPower Europe AG |
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GD660HTX75P6SB Folha de dados(HTML) 1 Page - StarPower Europe AG |
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1 / 10 page  GD660HTX75P6SB IGBT Module ©2019 STARPOWER Semiconductor Ltd. 11/9/2019 1/10 Preliminary STARPOWER SEMICONDUCTOR IGBT GD660HTX75P6SB 750V/660A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features Low VCE(sat) Trench IGBT technology Low switching losses 6 μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications Automotive application Hybrid and electric vehicle Inverter for motor drive Equivalent Circuit Schematic |
Nº de peça semelhante - GD660HTX75P6SB |
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Descrição semelhante - GD660HTX75P6SB |
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