2SC1623 datasheet(1/1 Pages) TEL

Nome de Peças	2SC1623

Descrição Electrónicos	Plastic-Encapsulate Transistors

PDF	1 Pages

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Fabricante Electrônico	TEL [TRANSYS Electronics Limited]

Página de início	http://www.transyselectronics.com

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2. 80¡ À0. 05

1. 60¡ À0. 05

SOT-23-3L Plastic-Encapsulate Transistors

2SC1623 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM: 200

mW (Tamb=25

℃)

Collector current

ICM: 100

mA

Collector-base voltage

V(BR)CBO: 60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS(Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

100µA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

1mA, IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=60V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

µA

DC current gain

hFE(1)

VCE=6V, IC=1mA

90

600

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=10mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB=10mA

1

V

Transition frequency

fT

VCE=6V, IC=10mA

250

MHz

CLASSIFICATION OF

hFE(1)

Rank

L4

L5

L6

L7

Range

90-180

135-270

200-400

300-600

Marking

L4

L5

L6

L7

SOT-23-3L

1. BASE

2. EMITTER

3. COLLECTOR

Transys

Electronics

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