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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IRL7833LPBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRL7833LPBF Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 13 page  IRL7833/S/LPbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.1 3.8 m Ω ––– 3.7 4.5 VGS(th) Gate Threshold Voltage 1.4 ––– 2.3 V ∆V GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 150 ––– ––– S Qg Total Gate Charge ––– 32 47 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.7 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 5.1 ––– nC Qgd Gate-to-Drain Charge ––– 13 ––– Qgodr Gate Charge Overdrive ––– 5.3 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 18 ––– Qoss Output Charge ––– 22 ––– nC td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 50 ––– ns td(off) Turn-Off Delay Time ––– 21 ––– tf Fall Time ––– 6.9 ––– Ciss Input Capacitance ––– 4170 ––– Coss Output Capacitance ––– 950 ––– pF Crss Reverse Transfer Capacitance ––– 470 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy dh mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 150 f (Body Diode) A ISM Pulsed Source Current ––– ––– 600 (Body Diode) Ãh VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 42 63 ns Qrr Reverse Recovery Charge ––– 34 51 nC VGS = 20V VGS = -20V Conditions 14 Max. 560 30 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 38A f VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C Clamped Inductive Load VDS = 15V, ID = 30A VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V f ID = 26A VDS = 16V TJ = 25°C, IF = 30A, VDD = 15V di/dt = 100A/µs f TJ = 25°C, IS = 30A, VGS = 0V f showing the integral reverse p-n junction diode. MOSFET symbol VGS = 4.5V, ID = 30A f ––– VGS = 4.5V Typ. ––– ––– ID = 30A VGS = 0V VDS = 15V |
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