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REF5040 Folha de dados(PDF) 2 Page - Burr-Brown (TI)

[Old version datasheet] Texas Instruments acquired Burr-Brown Corporation. Click here to check the latest version.
Nome de Peças REF5040
Descrição Electrónicos  Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
PDF  18 Pages
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Fabricante Electrônico  BURR-BROWN [Burr-Brown (TI)]
Página de início  http://www.burr-brown.com
Logo BURR-BROWN - Burr-Brown (TI)

REF5040 Folha de dados(HTML) 2 Page - Burr-Brown (TI)

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ABSOLUTE MAXIMUM RATINGS
(1)
REF5020,, REF5025
REF5030, REF5040
REF5045, REF5050
SBOS410 – JUNE 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
PRODUCT
OUTPUT VOLTAGE
PACKAGE-LEAD
PACKAGE DESIGNATOR
PACKAGE MARKING
STANDARD GRADE (8ppm, 0.1%)
SO-8
D
REF5020
REF5020A
2.048V
MSOP-8(2)
DGK
R50A
SO-8
D
REF5025
REF5025A
2.5V
MSOP-8(2)
DGK
R50B
SO-8
D
REF5030
REF5030A
3.0V
MSOP-8(2)
DGK
R50C
SO-8
D
REF5040
REF5040A
4.096V
MSOP-8(2)
DGK
R50D
SO-8
D
REF5045
REF5045A
4.5V
MSOP-8(2)
DGK
R50E
SO-8
D
REF5050
REF5050A
5.0V
MSOP-8(2)
DGK
R50F
HIGH GRADE (3ppm, 0.05%)
SO-8
D
REF5020
REF5020I
2.048V
MSOP-8(2)
DGK
R50A
SO-8
D
REF5025
REF5025I
2.5V
MSOP-8(2)
DGK
R50B
SO-8
D
REF5030
REF5030I
3.0V
MSOP-8(2)
DGK
R50C
SO-8
D
REF5040
REF5040I
4.096V
MSOP-8(2)
DGK
R50D
SO-8
D
REF5045
REF5045I
4.5V
MSOP-8(2)
DGK
R50E
SO-8
D
REF5050
REF5050I
5.0V
MSOP-8(2)
DGK
R50F
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
MSOP-8 (DGK) package available Q3, 2007.
PARAMETER
REF50xx
UNIT
Input Voltage
+18
V
Output Short-Circuit
30
mA
Operating Temperature Range
–55 to +125
°C
Storage Temperature Range
–55 to +150
°C
Junction Temperature (TJ max)
+150
°C
Human Body Model (HBM)
3000
V
ESD Rating
Charged Device Model (CDM)
1000
V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
2
Copyright © 2007, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Link(s): REF5020 REF5025 REF5030 REF5040 REF5045 REF5050



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