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IXFN48N60P Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças IXFN48N60P
Descrição Electrónicos  N-Channel MOSFET Transistor
PDF  3 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFN48N60P Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXFN48N60P Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFN48N60P Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFN48N60P Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISFM1291
eq IXFN48N60P
N-Channel MOSFET Transistor
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 40A@ TC=25℃
· Drain Source Voltage -VDSS= 600V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 140mΩ(Max)@VGS= 10V
APPLICATIONS
· Battery Chargers
· DC Choppers
· Power Factor Correction (PFC)
· DC-DC Converters
· High Speed Power Switching Application
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
40
A
IDM
Drain Current-Single Pulse
110
A
PD
Total Dissipation @TC=25℃
625
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.2
℃
/W
D
G
S
S
SOT-227 package


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