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M58PR256LE Folha de dados(PDF) 94 Page - STMicroelectronics

Nome de Peças M58PR256LE
Descrição Electrónicos  256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
PDF  119 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR256LE Folha de dados(HTML) 94 Page - STMicroelectronics

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Common Flash interface
M58PR256LE, M58PR512LE, M58PR001LE
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Table 44.
CFI query system interface information
Offset
Data
Description
Value
01Bh
0017h
VDD logic supply minimum program/erase or write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7 V
01Ch
0020h
VDD logic supply maximum program/erase or write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
01Dh
0085h
VPP [programming] supply minimum program/erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
8.5 V
01Eh
0095h
VPP [programming] supply maximum program/erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
9.5 V
01Fh
0006h
Typical timeout per single byte/word program = 2n µs
64 µs
020h
000Bh
Typical timeout for buffer program = 2n µs
2048 µs
021h
000Ah
Typical timeout per individual block erase = 2n ms
1 s
022h
0000h
Typical timeout for full chip erase = 2n ms
NA
023h
0002h
Maximum timeout for word program = 2n times typical
256 µs
024h
0002h
Maximum timeout for buffer program = 2n times typical
8192 µs
025h
0002h
Maximum timeout per individual block erase = 2n times typical
4 s
026h
0000h
Maximum timeout for chip erase = 2n times typical
NA



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