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TMS29F040 Folha de dados(PDF) 13 Page - Texas Instruments

Nome de Peças TMS29F040
Descrição Electrónicos  524288 BY 8-BIT FLASH MEMORY
PDF  37 Pages
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TMS29F040 Folha de dados(HTML) 13 Page - Texas Instruments

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TMS29F040
524288 BY 8-BIT
FLASH MEMORY
SMJS820C – APRIL 1996 – REVISED JUNE 1998
13
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
electrical dc characteristics over recommended ranges of supply voltage and ambient
temperature
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
High level dc input voltage
TTL
2
VCC + 0.5
V
VIH
High-level dc input voltage
CMOS
0.7*VCC
VCC + 0.3
V
V
Low level dc input voltage
TTL
–0.5
0.8
V
VIL
Low-level dc input voltage
CMOS
–0.5
0.8
V
VID
Algorithm-selection and sector-protect/unprotect
input voltage
VCC = 5.0 V
10.5
12.5
V
VLKO
Low VCC lock-out voltage (see Note 4)
3.2
V
TTL
VCC =VCC MIN†
IOH = – 2.5 mA
2.4
VOH
High-level dc output voltage
CMOS
VCC =VCC MIN
IOH = – 100 µA
VCC – 0.4
V
VOH
High level dc out ut voltage
CMOS
VCC =VCC MIN
IOH = – 2.5 mA
0.85*VCC
V
V
Low-level dc output voltage
TTL
VCC =VCC MIN
IOL = 5.8 mA
0.45
V
VOL
Low level dc out ut voltage
(see Note 5)
CMOS
VCC =VCC MIN
IOL = 5.8 mA
0.45
V
II
Input current (leakage)
VCC =VCC MAX
VI =VSS to VCC
±1
µA
IO
Output current (leakage)
VCC =VCC MAX
VO =VSS to VCC
±1
µA
IID
High-voltage load current
VCC =VCC MAX
A9 = 12.5 V
50
µA
ICC1
VCC active current (see Note 6)
E = VIL,G = VIH
30
mA
ICC2
VCC active current (see Note 7)
E = VIL,G = VIH
60
mA
ICC3
VCC supply current (standby)
TTL-input level
VCC = VCC MAX
E =VIH
1
mA
ICC3
VCC supply current (standby)
CMOS-input level
VCC = VCC MAX
E =VCC$0.5 V
100
µA
† Refer to the recommended operating conditions table.
NOTES:
4. Typical value at nominal condition (TA = 25°C)
5. 12-mA IOL also available
6. ICC current in the read mode, switching at 6 MHz, IOUT = 0 mA
7. ICC current while erase or program operation is in progress
capacitance over recommended ranges of supply voltage and ambient temperature
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
Ci1
Input capacitance (All inputs except A9, E, G)
VI = 0 V, f = 1 MHz
7.5
pF
Ci2
Input capacitance (A9, E, G)
VI = 0 V, f = 1 MHz
9
pF
Co
Output capacitance
VO = 0 V, f = 1 MHz
12
pF



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