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IRG4BC20UPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRG4BC20UPBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 9 page ![]() Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 13 IC @ TC = 100°C Continuous Collector Current 6.5 A ICM Pulsed Collector Current 52 ILM Clamped Inductive Load Current 52 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy 5.0 mJ PD @ TC = 25°C Maximum Power Dissipation 60 PD @ TC = 100°C Maximum Power Dissipation 24 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 95445 Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Benefits VCES=600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A Parameter Typ. Max. Units RθJC Junction-to-Case 2.1 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient, typical socket mount 80 Wt Weight 2.0 (0.07) g (oz) Thermal Resistance Absolute Maximum Ratings W TO-220AB 6/22/04 www.irf.com 1 E C G n-channel Lead-Free |
Nº de peça semelhante - IRG4BC20UPBF |
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Descrição semelhante - IRG4BC20UPBF |
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