2

Symbol

Parameters and Test Conditions

Unit

Minimum

Maximum

Positive Drain Voltage

V

-

7.5

Total Drain Current

mA

-

35

DC Power Dissipation

W

-

.0

RF CW Input Power

dBm

-

20

Operating Channel Temperature

°C

-

+50

Storage Case Temperature

°C

-65

+50

Maximum Assembly Temperature (20 sec max)

°C

-

+260

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

The absolute maximum ratings for Vdd, Idd, Pdc and Pin were determined at an ambient temperature of 25°C unless noted otherwise.

Symbol

Parameters and Test Conditions

Unit

Minimum

Typical

Maximum

Recommended Drain Supply Voltage

V

-

5

-

Total Drain Supply Current

mA

70

95

30

°C/W

-

28

-

Notes:

2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.

Symbol

Parameters and Test Conditions

Unit

Minimum

Typical

Maximum

dB

5.5

7.5

9.5

RLin

Input Return Loss

dB

-

.5

-

RLout

Output Return Loss

dB

-

.6

-

Reverse Isolation

dB

-

-43.0

-

PdB

Output Power at dB Gain Compression

dBm

-

4.8

-

OIP3

Output 3rd Order Intercept Point

dBm

-

22.5

-

NF

dB

-

5.

7.0

Notes:

1. Typical value determined from a sample size of 500 parts from 2 wafers.

3. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance may be improved over a

narrower bandwidth by application of additional conjugate, linearity, or low noise matching.

4. All tested parameters guaranteed with measurement accuracy ± 0.5 dB for NF and ± 1.0 dB for gain.