2

Symbol

Units

Value

Notes

Positive Supply Voltage

V

6

2

Gate Supply Voltage

V

-3 to 0.5

Drain Current

mA

700

Power Dissipation

W

5.5

2, 3

CW Input Power

dBm

23

2

Maximum Operating Channel Temp.

°C

+155

4, 5

Storage Case Temp.

°C

-65 to +155

Maximum Assembly Temp (20 sec max)

°C

+260

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.

3. When operate at this condition with a base plate temperature of 85

4. These ratings apply to each individual FET

5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be

maintained at the lowest possible levels.

Symbol

Parameters and Test Conditions

Units

Value

Drain Supply Current (Vd=5 V, Vg set for Id Typical)

mA

650

Gate Supply Operating Voltage (Id(Q) = 650 (mA))

V

-1.1

°C/W

16.8

Channel Temperature

°C

139.6

Notes:

6. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power

consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In this

condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C.

Symbol

Parameters and Test Conditions

Units

Minimum

Typical

Maximum

Freq

Operational Frequency

GHz

27

32

Gain

dB

16

20

dBm

26

27

OIP3

Output Third Order Intercept Point

dBm

35

Input Return Loss

dB

10

Output Return Loss

dB

10

Isolation

Reverse Isolation

dB

43

Notes:

1. Small/Large -signal data measured in packaged form on a 2.4-mm connecter based evaluation board at TA = 25°C.

2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies

3. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a

narrower bandwidth by application of additional conjugate, linearity, or power matching.

4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=27, 30, and 32GHz

5. The Gain and P1dB tested at 27GHz guaranteed with measurement accuracy ± 1.5 dB for gain and ±1.6dB for P1dB.