IRF540 datasheet(1/8 Pages) STMICROELECTRONICS

Nome de Peças	IRF540

Descrição Electrónicos	N-CHANNEL 100V - 0.055Ω - 22A TO-220 LOW GATE CHARGE STripFET™II POWER MOSFET

PDF	8 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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February 2003

NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &

IRF540

N-CHANNEL 100V - 0.055

Ω - 22A TO-220

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.055Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

IRF540

100 V

<0.077

Ω

22 A

1

2

3

TO-220

Ordering Information

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 12A, VDD = 30V

SALES TYPE

MARKING

PACKAGE

PACKAGING

IRF540

IRF540&

TO-220

TUBE

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

22

A

ID

Drain Current (continuous) at TC = 100°C

15

A

IDM(•)

Drain Current (pulsed)

88

A

Ptot

Total Dissipation at TC = 25°C

85

W

Derating Factor

0.57

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

9

V/ns

EAS (2)

Single Pulse Avalanche Energy

220

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

Nº de peça semelhante - IRF540

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NXP Semiconductors	IRF540	86Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
STMicroelectronics	IRF540	53Kb / 6P	N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET Apr-1998
Fairchild Semiconductor	IRF540	146Kb / 5P	N-Channel Power MOSFETs, 27 A, 60-100V
International Rectifier	IRF540	177Kb / 6P	HEXFET POWER MOSFET
Vishay Siliconix	IRF540	1Mb / 8P	Power MOSFET 16-Jun-08

More results

Descrição semelhante - IRF540

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STL22NF10	324Kb / 8P	N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT™ LOW GATE CHARGE STripFET™ II MOSFET Feb-2003
	STP24NF10	48Kb / 6P	N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET Apr-2000
	STP40NF10	479Kb / 11P	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET Sep-2002
	STP40NF10L	272Kb / 8P	N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET Jun-2002
	IRF530	281Kb / 3P	N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET June 1988
	STB80NF10	317Kb / 14P	N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET 25-Jan-2007
	STB24NF10	421Kb / 14P	N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET 09-Aug-2006
	STP40NF10	238Kb / 12P	N-channel 100V - 0.025??- 50A TO-220 Low gate charge STripFET??II Power MOSFET 31-Jan-2007
	STB35NF10	427Kb / 14P	N-channel 100V - 0.030廓 - 40A - D2PAK/TO-220 Low gate charge STripFET??II Power MOSFET 26-Jun-2006
	STP80NF10FP	226Kb / 12P	N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET 11-Apr-2006

More results

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