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MB90347CE Folha de dados(PDF) 69 Page - fujitsu semiconductor |
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MB90347CE Folha de dados(HTML) 69 Page - fujitsu semiconductor |
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69 / 84 page ![]() MB90340E Series 69 8. Flash Memory Program/Erase Characteristics * : This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to translate high temperature measurements into normalized value at +85 °C) . Parameter Conditions Value Unit Remarks Min Typ Max Sector erase time TA = +25 °C VCC = 5.0 V ⎯ 115 s Excludes programming prior to erasure Chip erase time ⎯ 9 ⎯ s Excludes programming prior to erasure Word (16-bit width) programming time ⎯ 16 3600 µs Except for the over head time of the system Program/Erase cycle ⎯ 10000 ⎯⎯ cycle Flash Data Retention Time Average TA = +85 °C 20 ⎯⎯ year * |
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