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TIP30 Folha de dados(PDF) 2 Page - Power Innovations Ltd

Nome de Peças TIP30
Descrição Electrónicos  PNP SILICON POWER TRANSISTORS
PDF  6 Pages
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Fabricante Electrônico  POINN [Power Innovations Ltd]
Página de início  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIP30 Folha de dados(HTML) 2 Page - Power Innovations Ltd

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TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
2
JULY 1968 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -30 mA
(see Note 5)
IB = 0
TIP30
TIP30A
TIP30B
TIP30C
-40
-60
-80
-100
V
ICES
Collector-emitter
cut-off current
VCE = -80 V
VCE = -100 V
VCE = -120 V
VCE = -140 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
TIP30
TIP30A
TIP30B
TIP30C
-0.2
-0.2
-0.2
-0.2
mA
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB = 0
IB = 0
TIP30/30A
TIP30B/30C
-0.3
-0.3
mA
IEBO
Emitter cut-off
current
VEB =
-5 V
IC = 0
-1
mA
hFE
Forward current
transfer ratio
VCE =
-4 V
VCE =
-4 V
IC = -0.2 A
IC =
-1 A
(see Notes 5 and 6)
40
15
75
VCE(sat)
Collector-emitter
saturation voltage
IB = -125 mA
IC =
-1 A
(see Notes 5 and 6)
-0.7
V
VBE
Base-emitter
voltage
VCE =
-4 V
IC =
-1 A
(see Notes 5 and 6)
-1.3
V
hfe
Small signal forward
current transfer ratio
VCE = -10 V
IC = -0.2 A
f = 1 kHz
20
|h
fe|
Small signal forward
current transfer ratio
VCE = -10 V
IC = -0.2 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
4.17
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
†
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = -1 A
VBE(off) = 4.3 V
IB(on) = -0.1 A
RL = 30 Ω
IB(off) = 0.1 A
tp = 20 µs, dc ≤ 2%
0.3
µs
toff
Turn-off time
1
µs



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