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STP4N150 Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças STP4N150
Descrição Electrónicos  N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET
PDF  14 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP4N150 Folha de dados(HTML) 5 Page - STMicroelectronics

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STP4N150 - STW4N150
Electrical characteristics
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Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
4
12
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 4 A, VGS = 0
2V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, di/dt = 100
A/µs
VDD = 45V
(see Figure 18)
510
3
12
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, di/dt = 100
A/µs
VDD = 45V, Tj = 150°C
(see Figure 18)
615
4
12.6
ns
µC
A



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