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P65NF06 Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças P65NF06
Descrição Electrónicos  N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET
PDF  14 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P65NF06 Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD65NF06 - STP65NF06
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
60
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,@125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
11.5
14
m
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS= 25V, ID =30A
50
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1700
400
135
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 30A
RG =4.7Ω VGS = 10V
(see Figure 12)
15
60
40
16
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 30V, ID = 60A,
VGS = 10V, RG =4.7Ω
(see Figure 13)
54
10
20
75
nC
nC
nC



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