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ISCF8080 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCF8080
Descrição Electrónicos  SiC N-Channel MOSFET
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8080 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCF8080
eq C3M0350120D
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
High blocking voltage with low on-resistance
·
High-speed switching with low capacitances
·
Fast intrinsic diode with low reverse recovery
APPLICATIONS
·
UPS
·
High voltage DC/DC converters
·
Switched mode power supplies
·
Renewable energy
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1200
V
VGSS
Gate-Source Opetation Voltage
-8/+19
V
ID
Drain Current-Continuous@Tc=25℃
7.6
A
ID
Drain Current-Continuous@Tc=100℃
5.5
A
IDM
Drain Current-Single Pluse
20
A
PD
Total Dissipation @TC=25℃
50
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5
℃
/W
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