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OPA130UA/2K5 Folha de dados(PDF) 3 Page - Texas Instruments

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Nome de Peças OPA130UA/2K5
Descrição Electrónicos  Low Power, Precision FET-INPUT OPERATIONAL AMPLIFIERS
PDF  16 Pages
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
Logo TI - Texas Instruments

OPA130UA/2K5 Folha de dados(HTML) 3 Page - Texas Instruments

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OPA130, OPA2130, OPA4130
3
SBOS053A
www.ti.com
ELECTRICAL CHARACTERISTICS
At TA = +25°C, VS = ±15V, and RL = 10kΩ, unless otherwise noted.
OPA130PA, UA
OPA2130PA, UA
OPA4130PA, UA
PARAMETER
CONDITION
MIN
TYP
MAX
UNITS
OFFSET VOLTAGE
Input Offset Voltage
±0.2
±1mV
vs Temperature(1)
Operating Temperature Range
±2
±10
µV/°C
vs Power Supply
VS = ±2.25V to ±18V
2
20
µV/V
Channel Separation (dual and quad)
0.3
µV/V
INPUT BIAS CURRENT(2)
Input Bias Current
VCM = 0V
+5
±20
pA
vs Temperature
See Typical Characteristics
Input Offset Current
VCM = 0V
±2
±20
pA
NOISE
Input Voltage Noise
Noise Density, f = 10Hz
30
nV/
√Hz
f = 100Hz
18
nV/
√Hz
f = 1kHz
16
nV/
√Hz
f = 10kHz
16
nV/
√Hz
Current Noise Density, f = 1kHz
4fA/
√Hz
INPUT VOLTAGE RANGE
Common-Mode Voltage Range, Positive
(V+)–2
(V+)–1.5
V
Negative
(V–)+2
(V–)+1.2
V
Common-Mode Rejection
VCM = –13V to +13V
90
105
dB
INPUT IMPEDANCE
Differential
1013 || 1
Ω || pF
Common-Mode
VCM = –13V to +13V
1013 || 3
Ω || pF
OPEN-LOOP GAIN
Open-loop Voltage Gain
VO = –13.8V to +13V
120
135
dB
RL = 2kΩ, VO = –13V to +12V
120
135
dB
FREQUENCY RESPONSE
Gain-Bandwidth Product
1
MHz
Slew Rate
2V/
µs
Settling Time: 0.1%
G = 1, 10V Step, CL = 100pF
5.5
µs
0.01%
G = 1, 10V Step, CL = 100pF
7
µs
Overload Recovery Time
G = 1, VIN = ±15V
2
µs
Total Harmonic Distortion + Noise
1kHz, G = 1, VO = 3.5Vrms
0.0003
%
OUTPUT
Voltage Output, Positive
(V+)–2
(V+)–1.5
V
Negative
(V–)+1.2
(V–)+1
V
Positive
RL = 2kΩ
(V+)–3
(V+)–2.5
V
Negative
RL = 2kΩ
(V–)+2
(V–)+1.5
V
Short-Circuit Current
±18
mA
Capacitive Load Drive (Stable Operation)
10
nF
POWER SUPPLY
Specified Operating Voltage
±15
V
Operating Voltage Range
±2.25
±18
V
Quiescent Current (per amplifier)
IO = 0
±530
±650
µA
TEMPERATURE RANGE
Operating Range
–40
+85
°C
Storage
–40
+125
°C
Thermal Resistance,
θ
JA
DIP-8
100
°C/W
SO-8 Surface-Mount
150
°C/W
DIP-14
80
°C/W
SO-14 Surface-Mount
110
°C/W
NOTES: (1) Ensured by wafer test. (2) High-speed test at TJ = 25°C.



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