CY22800
Document #: 001-07704 Rev. *A
Page 7 of 10
Absolute Maximum Conditions
Parameter
Description
Min
Max
Unit
VDD
Supply Voltage
–0.5
4.6
V
TS
Storage Temperature
–65
125
°C
TJ
Junction Temperature
–
125
°C
Digital Inputs
VSS – 0.3
VDD + 0.3
V
Digital Outputs referred to VDD
VSS – 0.3
VDD + 0.3
V
Electro-Static Discharge
2
–
kV
Recommended Operating Conditions
Parameter
Description
Min
Typ
Max
Unit
VDD
Operating Voltage
3.14
3.3
3.47
V
TA
Ambient Temperature, Commercial Grade
0
–
70
°C
Ambient Temperature, Industrial Grade
–40
–
85
°C
CLOAD
Max. Load Capacitance on the CLK output
–
–
15
pF
fREF[4]
Reference Frequency
0.5
–
100
MHz
tPU
Power-up time for all VDDs to reach minimum specified voltage (power ramps
must be monotonic)
0.05
–
500
ms
Pullable Crystal Specifications for VCXO Application ONLY
Parameter
Name
Min
Typ
Max
Unit
CLNOM
Crystal Load Capacitance
–
14
–
pF
R1
Equivalent Series Resistance
–
–
25
Ω
R3/R1
Ratio of Third Overtone Mode ESR to Fundamental Mode ESR. Ratio used
because typical R1 values are much less than the maximum spec
3–
–
–
DL
Crystal Drive Level. No external series resistor assumed
–
0.5
2
mW
F3SEPHI
Third overtone separation from 3*FNOM (High Side)
300
–
–
ppm
F3SEPLO
Third overtone separation from 3*FNOM (Low Side)
–
–
–150
ppm
C0
Crystal shunt capacitance
7pF
C0/C1
Ratio of Shunt to motional capacitance
180
–
250
C1
Crystal motional capacitance
14.4
18
21.6
fF
Recommended Crystal Specifications for ALL other Applications
Parameter
Name
Description
Min
Typ
Max
Unit
FNOM
Nominal Crystal Frequency
Parallel resonance, fundamental mode, and
AT cut
8–
30
MHz
CLNOM
Nominal Load Capacitance
–
12
–
pF
R1
Equivalent Series Resistance
(ESR)
Fundamental mode
–
35
50
Ω
DL
Crystal Drive Level
No external series resistor assumed
–
0.5
2
mW
Note
4. Configuration dependent, see the one-page documents.
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